Inherent D‐A Architecture in Indoloquinoxalines with an Array of Substituents for Non‐Volatile Memory Device Applications

Indoloquinoxaline-based molecules for binary WORM memory devices: The resistive switching memory behaviour of indoloquinoxaline designed with an array of substituents have been studied. The results demonstrate efficient charge transport enabling WORM memory behaviour with a low threshold voltage, highlighting its potential for further refinement.

Abstract

Donor–acceptor (D-A)-based architecture has been the key to increase storage capability efficiency through the enhanced charge transportation in the fabricated device. We have designed and synthesized a series of functionalized indoloquinoxalines (IQ) for non-volatile organic memory devices. The investigation on UV-visible spectra reveals the absorption maxima of the compounds around 420 nm, attributed to the intramolecular charge transfer between indole and quinoxaline moiety. The irreversible anodic peak in the 1.0 to 1.5 V range indicates the indole moiety‘s oxidation ability. Besides, the cathodic peak in the range of −0.5 to −1.0 V, contributed to the stability of the reduced quinoxaline unit. All the compounds exhibited uniformly covered thin film in SEM analysis, potentially facilitating the seamless charge carrier migration between adjacent molecules. The methoxyphenyl substituted compound exhibited the binary write-once read-many (WORM) memory behavior with the lowest threshold voltage of −0.81 V. The molecular simulations displayed the efficient intramolecular charge transfer, providing the fabricated device‘s distinctive conductive states. Except for the tert-butylphenyl compound, which showed volatile dynamic random-access memory (DRAM) behavior, all the other compounds exhibited non-volatile WORM memory behavior, suggesting IQs potential as an intrinsic D–A molecule in organic memory devices on further structural refinement.

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