Recent Advances in Transfer‐Free Synthesis of High‐Quality Graphene

Transfer-free synthesis of high-quality graphene on insulating substrates, facilitated by elevating reaction temperature, confining gas flow, introducing growth promotor and regulating substrate surface, holds great promise for the future applications of graphene.

Abstract

High-quality graphene obtained by chemical vapor deposition (CVD) technique holds significant importance in constructing innovative electronic and optoelectronic devices. Direct growth of graphene over target substrates readily eliminates cumbersome transfer processes, offering compatibility with practical application scenarios. Recent years have witnessed growing strategic endeavors in the preparation of transfer-free graphene with favorable quality. Nevertheless, timely review articles on this topic are still scarce. In this contribution, a systematic summary of recent advances in transfer-free synthesis of high-quality graphene on insulating substrates, with a focus on discussing synthetic strategies designed by elevating reaction temperature, confining gas flow, introducing growth promotor and regulating substrate surface is presented.

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